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Zeitschriftenartikel:

M. Arif, M. Sauer, A. Foelske-Schmitz, C. Eisenmenger-Sittner:
"Characterization of aluminum and titanium nitride films prepared by reactive sputtering under different poisoning conditions of target";
Journal of Vacuum Science & Technology A, 35 (2017), 6; S. 061507-01 - 061507-10.



Kurzfassung englisch:
The authors present an experimental approach to investigate the effect of the target poisoning level on the microstructure, preferred orientation, and composition of aluminum nitride (AlN) and titanium nitride (TiN) films grown on natively oxidized silicon (Si) wafers. Cylindrical aluminum (Al) and titanium targets are reactively sputtered in the poisoning mode using nitrogen as the reactive gas during direct current reactive magnetron sputtering. For each target, the nitride films are deposited during the first 10 min of poisoning and after 60 min of poisoning for 10 min each. Higher substrate temperatures as well as changes in the surface morphology are observed for both AlN and TiN samples prepared after long-term poisoning. After long-term poisoning of Al, the nitrogen content is increased and the preferred crystallographic orientation is changed from [101] to [103]. In the case of TiN, the deposited film is transformed into titanium rich coatings with higher compressive stress and a preferred orientation of [220] after long-term poisoning of the target. It is found that the different target poisoning levels and the corresponding energy of the incident particles influence the properties of the deposited films.


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1116/1.4993082


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.