[Zurück]


Zeitschriftenartikel:

S. Friedemann, N. Oeschler, C. Krellner, C. Geibel, S. Wirth, F. Steglich, S. Paschen, S. MaQuilon, Z. Fisk:
"Band-structure and anomalous contributions to the Hall effect of YbRh2Si2";
Physica B: Condensed Matter, 403 (2008), S. 1251 - 1253.



Kurzfassung englisch:
We report on Hall effect measurements on YbRh2Si2 single crystals with different residual resistivity and on LuRh2Si2 single crystal. The temperature dependence of the linear-response Hall coefficient of YbRh2Si2 is described by the anomalous Hall effect and the normal contribution incorporating multi-band effects. Sample dependencies at low T are found and explained by slight changes in the charge-carrier concentrations.

Schlagworte:
YbRh2Si2; LuRh2Si2; Hall effect; Heavy fermion; Non-Fermi liquid; Quantum critical point


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.physb.2007.10.118

Elektronische Version der Publikation:
http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVH-4PYYTV3-H&_user=103677&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000007978&_version=1&_urlVersion=0&_userid=103677&md5=5439b802fcf1ad68087fb5ba5f136c29


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.