[Zurück]

K. Petter, D. Eyidi, M. Stöger-Pollach, I. Sieber, P. Schubert-Bischoff, B. Rau, A.T. Tham, P. Schattschneider, S. Gall, K. Lips, W. Fuhs:
"Line defects in epitaxial silicon films grown at 560°C";
Physica B: Condensed Matter, 376-377 (2006), S. 117 - 121.

Line defects in epitaxial silicon films grown at 560°C

K. Petter a, D. Eyidi b, M. Stöger-Pollach b, I. Sieber a, P. Schubert-Bischoff a, B. Rau a, A.T. Tham c, 1, P. Schattschneider b, S. Gall a, K. Lips a and W. Fuhs a

a Hahn-Meitner-Institut, Kekuléstr. 5, D-12489 Berlin, Germany
b Technische Universität Wien, USTEM, Wiedner Hauptstr. 8-10, A-1040 Wien, Austria
c Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany

Available online 27 January 2006.

Abstract

We present an investigation of line defects in epitaxially grown silicon layers using Secco defect etching and transmission electron microscopy (TEM). 1 μm thick layers were deposited onto Si (1 0 0) wafers at a substrate temperature of 560°C electron cyclotron resonance chemical vapour deposition (ECRCVD). Defect etching reveals a variety of etch pits related to extended defects. A detailed analysis of the orientations and shapes of etch pits related to line defects is carried out. Using this information it is then possible to assign different types of etch pits to line defects observed by TEM. The investigations show, that one type of defect are extended dislocations parallel to <1 1 2>, while the direction of two other types are <1 1 0> as well as <3 1 4>, a direction uncommon for line defects in silicon.

Keywords: Silicon; Epitaxy; Defect etching

PACS: 61.72.Ff; 81.15.Gh

http://aleph.ub.tuwien.ac.at/F?base=tuw01&func=find-c&ccl_term=AC05938294

http://dx.doi.org/10.1016/j.physb.2005.12.032