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R. Dittrich, T. Schrefl, H. Forster, D. Süss, W. Scholz, J. Fidler:
"Energy barriers in magnetic random access memory elements";
IEEE Transactions on Magnetics, 39 (2003), No. 5; S. 2839 - 2841.

Energy barriers in magnetic random access memory elements
Dittrich, R. Schrefl, T. Forster, H. Suess, D. Scholz, W. Fidler, J.
Inst. of Solid State Phys., Vienna Univ. of Technol., Wien, Austria;
This paper appears in: Magnetics, IEEE Transactions on

Publication Date: Sept. 2003
On page(s): 2839- 2841
Volume: 39, Issue: 5
ISSN: 0018-9464
INSPEC Accession Number: 7778435
Abstract:
Minimum energy paths and energy barriers are calculated for the free data layer in elliptical magnetic random access memory elements using a recently developed method that combines the nudged elastic band method with finite-element micro-magnetics. The method calculates the magnetic states along the most probable reversal paths for applied fields below the zero temperature switching field. The reversal mode in the minimum energy path depends on the strength of the external field. With increasing easy axis field, the reversal mode becomes more inhomogeneous than at lower fields.

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